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Perpendicular Magnetic Anisotropy for CoFeBZr/MgO
- Authors
- Kil, Joon Pyo; Suh, Dong Ik; Bae, Gi Yoon; Choi, Won Joon; Kim, Guk Cheon; Noh, Seung Mo; Park, Wanjun
- Issue Date
- Nov-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Anisotropy energy; CoFeBZr; damping constant; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA)
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.51, no.11, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 51
- Number
- 11
- Start Page
- 1
- End Page
- 4
- ISSN
- 0018-9464
- Abstract
- We present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (K-eff) was 1.63 Merg/cm(3) for CoFeBZr.
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Related Researcher
- Park, Wan jun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)