Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer
- Authors
- Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun
- Issue Date
- Nov-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- magnetic-tunnel-junction; perpendicular-spin-transfer-torque-magnetic-random-access-memory; synthetic-antiferromagnetic; tunneling magneto-resistance ratio; exchange field
- Citation
- NANOTECHNOLOGY, v.26, no.47, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 26
- Number
- 47
- Start Page
- 1
- End Page
- 7
- ISSN
- 0957-4484
- Abstract
- We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt](n) lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H-ex) of 1.4 kOe at an ex situ annealing temperature of >350 degrees C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t(bcc)), i.e., the TMR ratio peaks at t(bcc) = 0.6 nm.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)