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Analysis of various DRAM devices from power consumption's perspective

Authors
Jeon, Dong-IkLee, Min-KyuChung, Ki-Seok
Issue Date
Aug-2015
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
DRAM; main memory; power analysis; refresh
Citation
Proceedings of the 2015 IEEE International Conference on Networking, Architecture and Storage, NAS 2015, pp.359 - 360
Indexed
SCOPUS
Journal Title
Proceedings of the 2015 IEEE International Conference on Networking, Architecture and Storage, NAS 2015
Start Page
359
End Page
360
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156617
DOI
10.1109/NAS.2015.7255229
ISSN
0000-0000
Abstract
DRAM has become a crucial component in terms of system power consumption as the size of main memory increases. To improve power efficiency of DRAM devices, we need to analyze characteristics of DRAM behavior from power consumption's perspective. In this paper, we analyze the characteristics of various DRAM devices from major vendors under real system operating environment. As the size of the DRAM increases, power consumption due to activate, precharge and burst operations remains about the same, but that due to background and refresh operations increases steadily. Especially, power consumption due to the refresh operation for 3D stacked DRAMs increases by 91% at high temperatures, which strongly implies that the refresh operation will become more crucial for DRAMs in the future.
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