Comparative studies of ZnON and ZnO thin film transistors fabricated by DC reactive sputtering method
- Authors
- Ok, Kyung-Chul; Jeong, Hyun-Jun; Lee, Hyun-Mo; Kim, Hyun-Suk; Park, Jin-Seong
- Issue Date
- Jun-2015
- Publisher
- Blackwell Publishing Ltd
- Keywords
- Reactive sputtering; Thin film transistors; Znon
- Citation
- Digest of Technical Papers - SID International Symposium, v.46, no.Book 3, pp.1155 - 1157
- Indexed
- SCOPUS
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 46
- Number
- Book 3
- Start Page
- 1155
- End Page
- 1157
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157152
- DOI
- 10.1002/sdtp.10036
- ISSN
- 0097-966X
- Abstract
- DC reactive sputtered ZnO and ZnON thin film transistors (TFTs) was fabricated in order to investigate the role of nitrogen element in the ZnO matrix. After low vacuum annealing at 25 °C, ZnON TFTs exhibited superior device performances (Vth = -0.16V, μsat, = 40.87cm2/Vs and SS = 77V/decade),comparing with ZnO TFT's performance (Vlh = 3.28V, μsat = 0.99 cm2/Vs and SS = 1.22 V/decade) under vacuum probe condition (10-3 torr). The physical and electronic structure was analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding status was also analyzed by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive spurring can suppress the crystal growth and enhance electron mobility due to Zn-N bonding.
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