Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient
- Authors
- Hong, Junghyup; Jang, Woochool; Song, Hyoseok; Kang, Chunho; Jeon, Hyeongtag; Jeon, Heeyoung; Park, Jingyu; Kim, Hyunjung; Kim, Honggi
- Issue Date
- Mar-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- RRAM; TaOx; Annealing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.5, pp.721 - 725
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 66
- Number
- 5
- Start Page
- 721
- End Page
- 725
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157778
- DOI
- 10.3938/jkps.66.721
- ISSN
- 0374-4884
- Abstract
- As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics.
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