Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor
- Authors
- Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Jang, Woochool; Kang, Chunho; Yuh, Junhan; Jeon, Hyeongtag
- Issue Date
- Feb-2015
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.2, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 54
- Number
- 2
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157955
- DOI
- 10.7567/JJAP.54.025501
- ISSN
- 0021-4922
- Abstract
- Ni films were deposited by metal organic chemical vapor deposition (MOCVD) using a novel Ni precursor, bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel [Ni(Pr-i-DAD)(2)], and NH3 gas. To optimize process conditions, the deposition temperature and reactant partial pressure were varied from 200 to 350 degrees C and from 0.2 to 0.99 Torr, respectively. Ni films deposited at 300 degrees C with a reactant pressure of 0.8 Torr exhibited excellent quality, and had a low carbon impurity concentration of around 4%. In addition, a sacrificial Ti capping layer was deposited by an in situ e-beam evaporator on top of the Ni films to enhance the thermal stability of the subsequently formed NiSi films. Both the Ti-capped and uncapped Ni films were annealed by a two-step method, with a first annealing conducted at 500 degrees C, followed by wet etching and then a second annealing carried out from 500 to 900 degrees C. The Ti capping layer did not affect the silicidation kinetic process, but by acting-as an oxygen scavenger, it did enhance the morphological stability of the NiSi films and thus improve their electrical properties.
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