Impact of tungsten contamination on the sensing margin of a CMOS image sensor cell
- Authors
- Song, Seung-Hyun; Kim, Il-Hwan; Lee, Gon-Sub; Park, Jea-Gun
- Issue Date
- Jan-2015
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 54
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158134
- DOI
- 10.7567/JJAP.54.016501
- ISSN
- 0021-4922
- Abstract
- We investigated the impact of tungsten contamination on minority-carrier recombination lifetime, the photodiode dark/photo current and sensitivity of a pinned photodiode, and the sensing margin of a CMOS image sensor (CIS) cell. After an intentional tungsten contamination and followed by driving at 800 degrees C for 30 min, tungsten contaminant were located from the surface to p- and n-type regions of a photodiode. The tungsten contamination degraded minority-carrier recombination life-time and the dark current and sensitivity of a pinned photodiode; i.e., there was a good correlation between the minority recombination lifetime and the sensitivity of a photodiode. As a result, tungsten contamination directly degraded the sensing margin of a CIS cell photodiode; i.e., it decreased with increasing tungsten contaminant concentration.
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