Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
- Authors
- Nguyen, Manh-Cuong; Jeon, Yoon-Seok; Tong, Duc-Tai; You, Seung-Won; Jeong, Jae Kyeong; Kim, Bio; Ahn, Jae-Young; Hwang, Kihyun; Choi, Rino
- Issue Date
- Dec-2014
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Channel trap density; Charge pumping; Grain size effect; Hot carrier injection; Polysilicon; Trap distribution
- Citation
- SOLID-STATE ELECTRONICS, v.104, pp.86 - 89
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 104
- Start Page
- 86
- End Page
- 89
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158330
- DOI
- 10.1016/j.sse.2014.11.015
- ISSN
- 0038-1101
- Abstract
- The trap distribution of a polysilicon (poly-Si) channel in a metal-oxide-semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared to single crystal Si channels, the poly-Si channels exhibited a high density of bulk channel traps due to the presence of grain boundaries. The densities of the trap states existing in the poly-silicon channel with various grain sizes and channel thicknesses were extracted and compared. The grain size of poly-Si was found to have a stronger impact on the trap distribution than the channel thickness. After hot carrier stress, the trap density in the poly-silicon channel increases and the generated traps are located both at mid gap energy level and near the conduction band energy level.
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