Characterization of microcrystalline silicon thin film solar cells prepared by high working pressure plasma-enhanced chemical vapor deposition
- Authors
- Lee, Sung-Do; Lee, Young-Joo; Nam, Kee-Seok; Jeong, Yongsoo; Kim, Dong-Ho; Kim, Chang-Su; Park, Sung-Gyu; Kwon, Se-Hun; Kwon, Jung-Dae; Park, Jin-Seong
- Issue Date
- Dec-2014
- Publisher
- SPRINGER
- Keywords
- Silicon; Microcrystalline; High working pressure; Chemical vapor deposition
- Citation
- JOURNAL OF ELECTROCERAMICS, v.33, no.3-4, pp.149 - 154
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTROCERAMICS
- Volume
- 33
- Number
- 3-4
- Start Page
- 149
- End Page
- 154
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158475
- DOI
- 10.1007/s10832-014-9929-x
- ISSN
- 1385-3449
- Abstract
- Using the high working pressure plasma-enhanced chemical vapor deposition (HWP-PECVD) technique, the hydrogenated microcrystalline silicon (mu c-Si:H) films for photovoltaic layers of thin film solar cells was investigated. The mu c-Si:H films were deposited on surface textured fluorine-doped tin oxide (FTO) glass substrates at 100 Torr in a 100 MHz very high frequency (VHF) plasma of gas mixtures containing He, H-2, and SiH4. It was found that an optimum ratio of the H-2/SiH4 flow-rate existed for growing a homogenous microcrystalline through the whole film without amorphous incubation layer. When an intrinsic mu c-Si:H thin film was deposited at n-i-p single junction solar cell, the cell performances were dependent on with or without an amorphous incubation layer. With an amorphous incubation layer, the open circuit voltage (V (oc) ) of cell was 0.8 V, which was typical cell property of hydrogenated amorphous silicon (a-Si:H). On the other hand, at the optimum ratio of the H-2/SiH4 flow-rate, mu c-Si:H single cell responding an infrared light showed the V (oc) of 0.4 V.
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