Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn-Sn-O Semiconductors for Thin-Film Transistor Applications
- Authors
- Kim, Seong Jip; Jeon, Hye-Ji; Oh, Sang-Jin; Lee, Sun Sook; Choi, Youngmin; Park, Jin-Seong; Jeong, Sunho
- Issue Date
- Nov-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- formamide; print; indium free; zinc tin oxide; semiconductor; transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.21, pp.18429 - 18434
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 6
- Number
- 21
- Start Page
- 18429
- End Page
- 18434
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158757
- DOI
- 10.1021/am505457t
- ISSN
- 1944-8244
- Abstract
- In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn-Sn-O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol gel reactions and the evolution of chemical structure. It is revealed that the formamide plays a critical chemical role in evolving a chemical structure with more oxygen-deficient oxide lattice and with less hydroxide, allowing for high field-effect mobility over 7 cm(2)/V. s. Furthermore, it is for the first time demonstrated that electrically active metal-oxide films can be patterned, using an air-brush printing technique, by directly depositing formamide-mediated ZTO-precursor solutions in patterned geometries.
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