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Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors
- Issue Date
- Oct-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- Antimony doping; Indium oxide semiconductors; Lone-pair s-electron; Photobias stability; Thin film transistors
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, pp.924 - 927
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 8
- Start Page
- 924
- End Page
- 927
- ISSN
- 1862-6254
- Abstract
- The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I-ON/OFF ratio of 4.6 cm(2)/V s, 0.29 V/decade, 1.9 V, and 3 x 10(7), respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)