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High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
- Authors
- Lee, Hyoung-Rae; Park, Jea-Gun
- Issue Date
- Oct-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- IGZO TFT; Stability; NBIS; Si doped
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.7, pp.1174 - 1178
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 65
- Number
- 7
- Start Page
- 1174
- End Page
- 1178
- ISSN
- 0374-4884
- Abstract
- We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V (th) ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO (X) distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O-2. This process is applicable to the TFT manufacturing process with a variable sputtering target.
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)