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Particle Deposition Velocity Onto EUVL Masks in Vertical Airflow

Authors
Kim, Won-GeunLee, HandolYook, Se-JinLee, Kwan-Soo
Issue Date
Aug-2014
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Deposition velocity; wafer; mask; EUVL; particle contamination
Citation
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, v.27, no.3, pp.417 - 421
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume
27
Number
3
Start Page
417
End Page
421
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159420
DOI
10.1109/TSM.2014.2337374
ISSN
0894-6507
Abstract
Extreme ultraviolet lithography (EUVL) masks are vulnerable to particulate contamination due to the unavailability of pellicles. Particle deposition velocity is used to assess the level of particulate contamination. The particle deposition velocity onto a circular disk or a square flat plate situated perpendicular to the airflow was investigated. The numerical and experimental methods employed in this paper were validated by comparing the numerically simulated mean Sherwood numbers or the experimentally determined particle deposition velocities with the theoretically predicted values for the circular disk, representing a wafer, exposed to vertical airflow. Then, an equation for predicting the particle deposition velocity onto a square flat plate, simulating a EUVL mask, in vertical airflow was suggested by numerically obtaining the mean Sherwood number correlation, and validated through experiments.
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