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Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- Authors
- Kim, Hyeon-A; Kim, Jeong Oh; Hur, Jae Seok; Son, Kyoung-Seok; Lim, Jun Hyung; Cho, Johann; Jeong, Jae Kyeong
- Issue Date
- Nov-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Densification; indium gallium tin oxide (IGTO); low temperature; mobility; sputtering; thin-film transistor (TFT)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.11, pp.4854 - 4860
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 65
- Number
- 11
- Start Page
- 4854
- End Page
- 4860
- ISSN
- 0018-9383
- Abstract
- The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)