Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
- Authors
- Jeon, Hye-ji; Lee, Seul-Gi; Kim, H.; Park, Jin-Seong
- Issue Date
- May-2014
- Publisher
- ELSEVIER
- Keywords
- Chemical vapor deposition; Oxide semiconductor; Thin film transistor
- Citation
- APPLIED SURFACE SCIENCE, v.301, pp.358 - 362
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 301
- Start Page
- 358
- End Page
- 362
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160059
- DOI
- 10.1016/j.apsusc.2014.02.080
- ISSN
- 0169-4332
- Abstract
- Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to similar to 100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.
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