Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of metal electrode on characteristics of gamma-irradiated silicon carbide detector
- Authors
- Park, Junesic; Park, Se Hwan; Shin, Hee-Sung; Kim, Ho-Dong; Kim, Jungho; Lee, Seung Wook; Lee, Seung Kyu; Kim, Yong Kyun
- Issue Date
- Apr-2014
- Publisher
- Atomic Energy Society of Japan/Nihon Genshiroku Gakkai
- Keywords
- silicon carbide; semiconductor detector; p-i-n diode detector; semiconductor neutron detector; radiation damage; gamma-ray irradiation; metal electrode
- Citation
- Journal of Nuclear Science and Technology, v.51, no.4, pp 482 - 486
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of Nuclear Science and Technology
- Volume
- 51
- Number
- 4
- Start Page
- 482
- End Page
- 486
- ISSN
- 0022-3131
1881-1248
- Abstract
- Silicon carbide (SiC) is a highly promising semiconductor neutron-detector material for harsh environments such as nuclear reactor cores and spent-fuel storage pools. In the present study, three 4H-SiC p-i-n diode detectors were fabricated as variations of those metal-electrode structures. The I-V characteristics and alpha-particle responses of the detectors were measured before and after gamma-ray exposure. The detector with a Ti/Au electrode showed the lowest change of leakage current after irradiation; none of the detectors showed any change in the charge-collection efficiency when a sufficient electric field was applied after gamma irradiation of up to 8.1 MGy.
- Appears in
Collections - 서울 공과대학 > 서울 원자력공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Yong Kyun
- COLLEGE OF ENGINEERING (DEPARTMENT OF NUCLEAR ENGINEERING)