Effect of metal electrode on characteristics of gamma-irradiated silicon carbide detectoropen access
- Authors
- Park, Junesic; Park, Se Hwan; Shin, Hee-Sung; Kim, Ho-Dong; Kim, Jungho; Lee, Seung Wook; Lee, Seung Kyu; Kim, Yong Kyun
- Issue Date
- Apr-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- silicon carbide; semiconductor detector; p-i-n diode detector; semiconductor neutron detector; radiation damage; gamma-ray irradiation; metal electrode
- Citation
- JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, v.51, no.4, pp.482 - 486
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
- Volume
- 51
- Number
- 4
- Start Page
- 482
- End Page
- 486
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160315
- DOI
- 10.1080/00223131.2014.875956
- ISSN
- 0022-3131
- Abstract
- Silicon carbide (SiC) is a highly promising semiconductor neutron-detector material for harsh environments such as nuclear reactor cores and spent-fuel storage pools. In the present study, three 4H-SiC p-i-n diode detectors were fabricated as variations of those metal-electrode structures. The I-V characteristics and alpha-particle responses of the detectors were measured before and after gamma-ray exposure. The detector with a Ti/Au electrode showed the lowest change of leakage current after irradiation; none of the detectors showed any change in the charge-collection efficiency when a sufficient electric field was applied after gamma irradiation of up to 8.1 MGy.
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