Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device
- Authors
- Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Jang, Woochool; Seo, Hyungtak; Jeon, Hyeongtag
- Issue Date
- 2014
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- RSC ADVANCES, v.4, no.105, pp.61064 - 61067
- Indexed
- SCIE
SCOPUS
- Journal Title
- RSC ADVANCES
- Volume
- 4
- Number
- 105
- Start Page
- 61064
- End Page
- 61067
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161056
- DOI
- 10.1039/c4ra10446c
- Abstract
- In this study, Ni/TaOx/NiSi and Ni/TaOx/Ta/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. In this study, Ni/TaOx/NiSi and Ni/TaOx/T/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs.
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