Postdeposition annealing on VO2 films for resistive random-access memory selection devices
- Authors
- Lim, Heewoo; Cho, Haewon; Kim, Hyunjung; Lee, Namgue; Shin, Seokyoon; Jung, Chanwon; Kim, Hyunjun; Lim, Kyungpil; Jeon, Hyeongtag
- Issue Date
- Sep-2018
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.36, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 36
- Number
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16117
- DOI
- 10.1116/1.5021082
- ISSN
- 0734-2101
- Abstract
- In this study, VO2 films were deposited by thermal atomic layer deposition with vanadium oxytri-isopropoxide as a vanadium precursor and deionized water as a reactant. Postdeposition annealing was performed in order to enhance the crystallinity of VO2 films X-ray diffraction, scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy were used to characterize the physical and chemical properties of the as-deposited and annealed VO2 films. The results indicated that postdeposition annealing enhanced the crystallinity of the VO2 films and increased the area ratio of V4+. Finally, the electrical properties of the VO2 films were analyzed using a semiconductor parameter analyzer. The I-on/I-off ratio increased from 10(2) to 10(4) during postdeposition annealing at 450 degrees C. There were also significant increases in the hysteresis window.
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