Very Thin Extreme Ultraviolet Mask Absorber Material for Extremely Fine Pitch Patterning
- Authors
- Lee, Jae Uk; Hong, Seongchul; Ahn, Jinho
- Issue Date
- Jul-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.6, no.7, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 6
- Number
- 7
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162398
- DOI
- 10.7567/APEX.6.076502
- ISSN
- 1882-0778
- Abstract
- In this report, we propose palladium oxide (PdO) as an absorber material 14 nm. In our simulations, because of its low refractive index (n = 0.8634) and high extinction coefficient (k = 0.0536), an attenuated phase shift mask with a very thin (similar to 20 nm) PdO absorber can provide an EUV contrast as high as 88% at a 14 nm half pitch under dipole illumination. This results in a very limited horizontal-vertical critical dimension bias (<= 2.6 nm) and a sufficiently high normalized image log slope (>= 2.78) down to a 14 nm half pitch.
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