Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
- Authors
- Seung, HyunMin; Lee, Jong-Dae; Kim, Chang-Hwan; Park, Jea-Gun
- Issue Date
- May-2013
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- nonvolatile; polymer; memory; nanocrystal; Ni
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E96C, no.5, pp.699 - 701
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E96C
- Number
- 5
- Start Page
- 699
- End Page
- 701
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162889
- DOI
- 10.1587/transele.E96.C.699
- ISSN
- 0916-8524
- Abstract
- In summary, we successfully fabricated the nonvolatile hybrid polymer 4F(2) memory-cell. It was based on bistable state, which was observed in PS layer that is containing a Ni nanocrystals capped with NiO tunneling barrier sandwiched by Al electrodes. The current conduction mechanism for polymer memory-cell was demonstrated by fitting the I-V curves. The electrons were charged and discharged on Ni nanocrystals by tunneling through the NiO tunneling barrier. In addition, the memory-cell showed a good and reproducible nonvolatile memory-cell characteristic. Its memory margin is about 1.4 x 10. The retention-time is more than 10(5) seconds and the endurance cycles of program-and-erase is more than 250 cycles. Furthermore, Thefore, polymer memory-cell would be good candidates for nonvolatile 4F(2) cross-bar memory-cell.
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