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Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface
- Authors
- Cho, Byungsu; Lee, Jaesang; Seo, Hyungtak; Jeon, Hyeongtag
- Issue Date
- Mar-2013
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.102, no.10, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 102
- Number
- 10
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
1077-3118
- Abstract
- We demonstrate a significant improvement in various electrical instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) by implanting Au nanoparticles (NPs) on the a-IGZO back-channel. This TFT showed the enhanced stability of threshold voltage (V-th) under ambient humidity, illumination stress, and a-IGZO thickness variation tests. Application of back-channel Au NPs to a-IGZO TFT is regarded to control the surface potential, to lead reversible carrier trap/injection, and to increase incident UV light absorption by local surface plasmon. Au NPs are formed by e-beam evaporation, and therefore, this technique can be applicable to the TFT manufacturing process.
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