Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization
- Authors
- Kil, Joon Pyo; Bae, Gi Yeol; Suh, Dong Ik; Park, Wanjun; Kim, Kee Won; Kim, Kwang Seok
- Issue Date
- Nov-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Magnetic tunnel junction; Current-driven switching; Spin-transfer torque; MTJ switching; Switching stability; Thermal activation of magnetization switching
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1596 - 1599
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 10
- Start Page
- 1596
- End Page
- 1599
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164337
- DOI
- 10.3938/jkps.61.1596
- ISSN
- 0374-4884
- Abstract
- Spin-transfer torque enables magnetization switching by passing a spin-polarized current through nanostructures of spin valves or magnetic tunnel junctions. In this study, current-driven switching is investigated for magnetic tunnel junctions with a CoFeB free layer having in-plane magnetization. The critical switching current is found to depend on the feature of the switching modes and on the junction geometries. Especially, long-pulse mode switching generates equilibrium remnant magnetization states before complete magnetization reversal, which results in robust switching by reducing the local magnetization anomalies. The current-driven switching can be understood by using the combined effects of spin transfer and thermal activation.
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