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A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference
- Authors
- Park, Yong-Sik; Kil, Gyu-Hyun; Song, Yun-Heub
- Issue Date
- Feb-2012
- Publisher
- The Institute of Electronics, Information and Communication Engineers (IEICE)
- Keywords
- Spin-Transfer-Torque magneto resistive RAM (STT-MRAM); sense amplifier; dynamic reference; read margin
- Citation
- IEICE Electronics Express, v.9, no.3, pp 153 - 159
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE Electronics Express
- Volume
- 9
- Number
- 3
- Start Page
- 153
- End Page
- 159
- ISSN
- 1349-2543
- Abstract
- A novel sensing algorithm for non-volatile Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) is presented. The dynamic reference sense amplifier (DRSA) improves sensing margin to achieve high reliability and sensitivity by increasing the difference of input voltages of sense amplifier. A dynamic reference sensing algorithm is proposed as a solution for the read margin loss due to variation in magnetic tunneling junction (MTJ) parameters of the STT-MRAM. The proposed sensing method was designed in standard 0.18 um process parameters, and simulation results indicate simultaneously increased the read margin compared with the conventional sensing method.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)