Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors
- Issue Date
- Nov-2011
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- atomic layer deposition; thin film transistors; passivation; IGZO; HfO2; Al2O3
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.5, no.10-11, pp.403 - 405
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 5
- Number
- 10-11
- Start Page
- 403
- End Page
- 405
- ISSN
- 1862-6254
- Abstract
- In this study, the effects of a HfO2 buffer layer between an Al2O3 passivation layer and an indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) were investigated to enhance the environmental stability and electrical properties of the IGZO TFT. When applying the HfO2 buffer layer, the formation of HfAlxOy at the Al2O3/HfO2 interface reduces the water vapor transmission rate (WVTR) due to densification of the passivation layer. Consequently, by adding the HfO2 buffer layer, WVTR of the TFT was highly improved; moreover, changes in the electrical characteristics can be prevented compared to both the non-passivated and Al2O3-passivated TFTs.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)