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Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
- Issue Date
- Sep-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Density functional theory; Fe/MgO(001); interface structure; perpendicular magnetic anisotropy
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.9, pp.1287 - 1289
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 9
- Start Page
- 1287
- End Page
- 1289
- ISSN
- 0741-3106
- Abstract
- Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 x 1) periodicity. The formation of the oxygen vacancies in c(2 x 1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
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Related Researcher
- Chung, Yong Chae
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)