The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors
- Authors
- Kim, Sangwook; Kim, Sunil; Kim, Changjung; Park, JaeChul; Song, Ihun; Jeon, Sanghun; Ahn, Seung-Eon; Park, Jin-Seong; Jeong, Jae Kyeong
- Issue Date
- Aug-2011
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- InGaZnO; Thin film transistor; Photon irradiation; Bias instability
- Citation
- SOLID-STATE ELECTRONICS, v.62, no.1, pp.77 - 81
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 62
- Number
- 1
- Start Page
- 77
- End Page
- 81
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167745
- DOI
- 10.1016/j.sse.2011.04.014
- ISSN
- 0038-1101
- Abstract
- We investigated the effect of photon irradiation with various energies on the gate bias instability of indium-gallium-zinc oxide transistors. The illumination of red and green light on the transistor caused positive threshold voltage (V(th)) shifts of 0.23 V and 0.18 V. respectively, while it did not affect the V(th) value in blue light after a positive bias stress. However, the stability of transistors was deteriorated with increasing photon energy after a negative bias stress: negative V(th) shifts for red (-0.23 V) and blue light (-3.7 V). This difference can be explained by the compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation.
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