Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture
- Authors
- Song, Yun Heub; Park, Seung Young; Lee, Jung Min; Yang, Hyung Jun; Kil, Gyu Hyun
- Issue Date
- Aug-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bidirectional current write; crossbar array; junction evice; spin-transfer torque (STT) magnetic random access memory (MRAM)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1023 - 1025
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 8
- Start Page
- 1023
- End Page
- 1025
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167842
- DOI
- 10.1109/LED.2011.2157452
- ISSN
- 0741-3106
- Abstract
- We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N+/P/N+ bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N+/P. In addition, asymmetrical doping for two N+ terminals provides a high on-off ratio of 10(7) under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM.
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