Carbon contamination of EUV mask and its effect on CD performance
- Authors
- Lee, Sangsul; Doh, Jong Gul; Lee, Jae Uk; Lee, Inhwan; Jeong, Chang Young; Lee, Dong Gun; Rah, Seung-yu; Ahn, Jinho
- Issue Date
- Jul-2011
- Publisher
- ELSEVIER
- Keywords
- EUVL; Coherent scattering microscopy; Carbon contamination; Mask CD; Reflectivity; Shadowing effect
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.4, pp.S107 - S110
- Indexed
- SCIE
SCOPUS
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 4
- Start Page
- S107
- End Page
- S110
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168086
- DOI
- 10.1016/j.cap.2011.07.019
- ISSN
- 1567-1739
- Abstract
- The carbon contamination on extreme ultraviolet (EUV) masks is a critical issue causing throughput degradation and unexpected effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. The impact of carbon contamination on imaging performance was analyzed using actinic EUV coherent scattering microscopy (CSM) combined with an in-situ accelerated contamination system (ICS), which was installed on 11B EUVL beam-line at Pohang Light Source (PLS). In addition, the topography of the carbon contamination on the patterned mask was inspected with a scanning electron microscope (SEM). The mask critical dimension (CD) and reflectivity were compared before and after carbon contamination through accelerated exposure. The reflectivity degradation was measured as 5.5% after 3 h exposure which caused similar to 20 nm carbon deposition. A mask CD change of 88 nm line and the space pattern showed a similar trend but different absolute values as measured by CSM and CD-SEM. This difference confirms the importance of actinic inspection technique which emulates the practical imaging condition (6 degrees incident angle) as an EUV exposure tool.
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