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Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
- Issue Date
- May-2011
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- polymer nonvolatile; memory; nanocrystal
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.850 - 853
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E94C
- Number
- 5
- Start Page
- 850
- End Page
- 853
- ISSN
- 0916-8524
- Abstract
- In summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)