Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells
- Authors
- Nam, Woo-Sik; Seo, Sung-Ho; Park, Jea-Gun
- Issue Date
- Apr-2011
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.7, pp.H277 - H280
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 14
- Number
- 7
- Start Page
- H277
- End Page
- H280
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168720
- DOI
- 10.1149/1.3582801
- ISSN
- 1099-0062
- Abstract
- We investigated the effect of small-molecule layer thickness on nonvolatile memory characteristics such as memory margin, retention-time, and multi-level memory-cell operation for cross-bar 4F(2) small-molecule memory-cells embedded with Ni nanocrsystals surrounded by a NiO tunneling barrier. For a 50-nm small-molecule layer, the memory-cell demonstrated a memory margin of similar to 7.02 x 10(3) and a retention-time of similar to 10(5) s at 85 degrees C for four current levels. However, these nonvolatile memory characteristics worsened when the small-molecule layer thickness increased above 50-nm, and they eventually disappeared at similar to 140-nm. This is related to current conduction mechanisms, such as space-charge-limited-current and thermionic-field-emission-current, which depend on small-molecule layer thickness.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168720)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.