Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition
- Authors
- Park, In-Sung; Choi, Youngjae; Nichols, William T.; Ahn, Jinho
- Issue Date
- Mar-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.10, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 10
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168941
- DOI
- 10.1063/1.3562015
- ISSN
- 0003-6951
- Abstract
- The effects of water vapor treatment (WVT) on a Ge substrate were investigated in order to understand the improved electrical properties of Pt/HfO2/Ge metal-oxide-semiconductor (MOS) capacitors. The WVT and HfO2 deposition were performed in situ using an atomic layer deposition technique to avoid air exposure. As a result, the WVT on cleaned Ge substrates reduced the native oxide effectively and enhanced the initial growth of the HfO2 film. The improved interface qualities with WVT enhanced Ge-based device performance through a smoother capacitance-voltage curve, less increase in the inversion capacitance, and lower density of interface states.
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