Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Authors
- Choi, Changhwan; Lee, Kam-Leung; Narayanan, Vijay
- Issue Date
- Mar-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.12, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 12
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168947
- DOI
- 10.1063/1.3570655
- ISSN
- 0003-6951
- Abstract
- The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (V(FB)) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive V(FB) shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [V(o)(++)] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different V(FB) behaviors.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168947)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.