Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Authors
- Choi, Changhwan; Ando, Takashi; Narayanan, Vijay
- Issue Date
- Feb-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.8, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 8
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169139
- DOI
- 10.1063/1.3559929
- ISSN
- 0003-6951
- Abstract
- The impacts of ruthenium-based metal gate electrodes (Ru, RuOx, RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (V-FB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 degrees C) process. Increasing thickness of Ru and RuOx exhibits higher V-FB, attributed to filling oxygen vacancies [V-o] in high-k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher V-FB than PVD W or AVD TiN capping.
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