Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate
- Authors
- Choi, Changhwan; Narayanan, Vijay
- Issue Date
- Jan-2011
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.6, pp.H241 - H243
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 14
- Number
- 6
- Start Page
- H241
- End Page
- H243
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169291
- DOI
- 10.1149/1.3566073
- ISSN
- 1099-0062
- Abstract
- We have investigated the effects of millisecond flash annealing (ms-FLA) on the electrical properties of p-type metal-oxide-semiconductor (pMOS) devices with high-k gate dielectrics with TiN gate. Compared to conventional rapid thermal annealing (RTA), ms-FLA improves pMOS characteristics such as positive flatband voltage (V-FB) shift along with scaled equivalent oxide thickness (EOT) and negligible gate leakage degradation, attributed to the suppressed oxygen vacancies [V-o(2+)] generation in high-k gate dielectrics due to a shorter thermal budget. Al-containing capping layers, TiN thickness, and Si cap deposition temperatures with ms-FLA substantially affect thermally generated [V-o(2+)], leading to different V-FB and EOT.
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