Nitrogen behaviors in peald-grown sio2 films using n2o plasma reactant and its application in ald-izo tfts
- Authors
- Kim, Dong-Gyu; Yoo, Kwang Su; Kim, Hye-Mi; Park, Jin-Seong
- Issue Date
- Jun-2022
- Publisher
- John Wiley and Sons Inc
- Keywords
- Breakdown field; Display back-plane; Indium-zinc oxide; Memory device; N2O plasma; Oxide-based TFTs; PEALD; Power device; SiO2
- Citation
- Digest of Technical Papers - SID International Symposium, v.53, no.1, pp.1043 - 1046
- Indexed
- SCOPUS
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 53
- Number
- 1
- Start Page
- 1043
- End Page
- 1046
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171600
- DOI
- 10.1002/sdtp.15677
- ISSN
- 0097-966X
- Abstract
- We studied nitrogen (N) behaviors in plasma-enhanced atomic layer deposition (PEALD)-grown silicon dioxide (SiO2) using nitrous oxide (N2O) plasma reactant. The gradually improved breakdown phenomenon is attributed to N contents. However, although increase in the N contents, excess plasma power is degraded electrical characteristics. For applications of the SiO2 films using N2O plasma reactant, we fabricated indium-zinc oxide top-gate thin film transistors with SiO2 gate insulator (G.I). The stable both transfer characteristics and instability results are originated from decrease in oxygen vacancy in active layer by N2O plasma treatment during the G.I deposition.
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