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High-Performance p-Channel Tellurium Thin-Film Transistor Applications Fabricated at a Low Temperature of 150 °C
- Authors
- Kim, Taikyu; Choi, Cheol Hee; Jeong, Jae Kyeong
- Issue Date
- Jun-2022
- Publisher
- John Wiley and Sons Inc
- Keywords
- CMOS TFT; Inorganic p-type semiconductor; Tellurium; Thin-film transistor (TFT)
- Citation
- Digest of Technical Papers - SID International Symposium, v.53, no.1, pp.225 - 227
- Indexed
- SCOPUS
- Volume
- 53
- Number
- 1
- Start Page
- 225
- End Page
- 227
- ISSN
- 0097-966X
- Abstract
- Development of high-performance p-channel thin-film transistors (TFTs) can be an essential building block for next-generation display technologies which require a great power efficiency. While an n-channel In GaZnO TFT has been practically demonstrated, the counterparts are still challenging because of their ionic bonding nature. Here we report high-performance p-channel hexagonal tellurium (Te) TFT which exhibits outstanding device performances with a field-effect mobility of 21.2 cm2/Vs, a current modulation ratio of 2.3 × 10s, a subthreshold swing of 0.2 V/dec, and a threshold voltage of -0.3 V. This study shows a strong potential of p-channel Te TFT for next-generation display applications.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)