Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors
- Authors
- Seol, Young-Gug; Noh, Haw Young; Lee, Sang Sul; Ahn, Jinho; Lee, Nae Eung
- Issue Date
- Jul-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.1, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 1
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171984
- DOI
- 10.1063/1.2956407
- ISSN
- 0003-6951
- Abstract
- The incorporation of an ultrathin, atomic layer deposited HfO2 layer in between the spin-coated poly-4-vinyl phenol (PVP) organic layers in the laminated multilayer gate dielectric for pentacene organic thin film transistors on a flexible substrate reduced the gate leakage current by three to four orders of magnitude and thereby significantly enhanced the current on/off ratio up to congruent to 10(4)-fold. Cyclic bending testing indicated that the electrical characteristics of the device with the PVP/HfO2/PVP trilayer gate dielectric stack were superior to those of the device with the single PVP gate dielectrics due to the improved mechanical and electrical stabilities of the gate dielectric.
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