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Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors

Authors
Seol, Young-GugNoh, Haw YoungLee, Sang SulAhn, JinhoLee, Nae Eung
Issue Date
Jul-2008
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.93, no.1, pp.1 - 3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
93
Number
1
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171984
DOI
10.1063/1.2956407
ISSN
0003-6951
Abstract
The incorporation of an ultrathin, atomic layer deposited HfO2 layer in between the spin-coated poly-4-vinyl phenol (PVP) organic layers in the laminated multilayer gate dielectric for pentacene organic thin film transistors on a flexible substrate reduced the gate leakage current by three to four orders of magnitude and thereby significantly enhanced the current on/off ratio up to congruent to 10(4)-fold. Cyclic bending testing indicated that the electrical characteristics of the device with the PVP/HfO2/PVP trilayer gate dielectric stack were superior to those of the device with the single PVP gate dielectrics due to the improved mechanical and electrical stabilities of the gate dielectric.
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