Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Four-level Nonvolatile Small-molecule Memory-cell Embedded with Fe Nanocrystals Surrounded with an FeO and Fe2O3 Tunneling Barrier
- Authors
- Seo, Sung-Ho; Nam, Woo-Sik; Park, Kwang-Hee; Park, Jea-Gun
- Issue Date
- Dec-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonvolatile memory; Small molecule; Fe nanocrystal
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.6, pp.1426 - 1431
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 57
- Number
- 6
- Start Page
- 1426
- End Page
- 1431
- ISSN
- 0374-4884
- Abstract
- We developed a nonvolatile cross-bar 4F(2) small molecule (Alq(3): aluminum tris (8-hydroxyquinoline)) memory cell embedded with Fe nanocrystals surrounded by an FeO and Fe2O3 tunneling barrier. The memory, cell demonstrates a memory margin (I-on/I-off ratio) of similar to 7.44 x 10(2) and a retention-time of similar to 10(5) sec for four current levels (I-off: 2.73 x 10(-8), I-int2: 5.87 x 10(-7), I-int1: 3.64 x 10(-6), and I-on: 2.03 x 10(-5) A), which can probably be extended to ten years. Memory cells of this type follow a current conduction mechanism with space-charge-limited-current and F-N tunneling for nonvolatile memory cell operation.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)