Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
- Authors
- Jeong, Seok-Goo; Jeong, Hyun-Jun; Choi, Wan-Ho; Kim, KyoungRok; Park, Jin-Seong
- Issue Date
- Oct-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Oxide semiconductor; plasma-enhanced atomic layer deposition (PEALD); subchannel formation by hydrogen diffusion; thin-film transistors (TFTs)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.10, pp.4250 - 4255
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 67
- Number
- 10
- Start Page
- 4250
- End Page
- 4255
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1738
- DOI
- 10.1109/TED.2020.3017145
- ISSN
- 0018-9383
- Abstract
- Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A. The mobilities of A and B deviceswere 19.39 and 21.11 cm(2)/Vs, and the subthreshold slopes were 0.25 and 0.22 V/decade, respectively. In addition, the device reliability of A devices shows an abnormal threshold voltage (V-th) shift of -1.25 V under positive bias temperature stress (PBTS), caused by hydrogen diffusion from the gate insulator to the channel region near the source/drain electrode. However, B devices had a normal Vth shift of +2.87 V. X-ray photoelectron spectroscopy (XPS) and Fourier-transforminfrared spectroscopy (FT-IR) results showed that PECVD SiO2 has a large amount of hydrogen bonding, such as Si-OH, compared to PEALD SiO2. Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) measurement results confirmed that the hydrogen content of PECVD SiO2 was 2.24%, whereas that of PEALD SiO2 was lower at 1.45%.
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