Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
- Authors
- Kwak, June Sik; Do, Young Ho; Bae, Yoon Cheol; Im, Hyunsik; Hong, Jin Pyo
- Issue Date
- Sep-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- CoOx; Resistive switching; Nonvolatile memory; ReRAM
- Citation
- THIN SOLID FILMS, v.518, no.22, pp.6437 - 6440
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 22
- Start Page
- 6437
- End Page
- 6440
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174146
- DOI
- 10.1016/j.tsf.2010.03.050
- ISSN
- 0040-6090
- Abstract
- Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoO thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoO thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoOx. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoOx layer, not in the dominant CoO.
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