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Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Authors
Kim, Tae-WookChoi, Byong-Deok
Issue Date
Mar-2010
Publisher
IOP Publishing Ltd
Citation
Japanese Journal of Applied Physics, v.49, no.3, pp 1 - 6
Pages
6
Indexed
SCI
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
49
Number
3
Start Page
1
End Page
6
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175314
DOI
10.1143/JJAP.49.03CD03
ISSN
0021-4922
1347-4065
Abstract
This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 mu m, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.
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