Effects of the Gate Dielectric on the Subthreshold Transport of Carbon Nanotube Network Transistors Grown by Using Plasma-enhanced Chemical Vapor Deposition
- Authors
- Jeong, Seung Geun; Park, Wanjun
- Issue Date
- Feb-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Carbon Nanotube; Network; Transistor; Percolation; Passivation; Dielectric
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.2, pp.598 - 601
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 56
- Number
- 2
- Start Page
- 598
- End Page
- 601
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175484
- DOI
- 10.3938/jkps.56.598
- ISSN
- 0374-4884
- Abstract
- In this study, we investigated the subthreshold slope of random network carbon nanotube transisters with different geometries and passivations. Single-wall carbon nanotubes with lengths of 1-2 in were grown by using plasma-enhanced chemical vapor deposition to form the transistor channels. A critical channel length, where the subthreshold slope was saturated. of 7 pm was obtained. This was due to the percolational behavior of the nanotube random networks. With the dielectric passivation, the subthreshold slope was dramatically reduced from 9 V/decade to 0.9 V/decade by reducing interfacial trap sites, which then reduced the interface capacitance between the nanotube network and the gate dielectric.
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