Effect of ozone concentration on atomic layer deposited HfO2 on Si
- Authors
- Chung, K.J.; Park, T.J.; Sivasubramani, P.; Kim, J.; Ahn, J.
- Issue Date
- 2010
- Citation
- ECS Transactions, v.28, no.1, pp.221 - 226
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 28
- Number
- 1
- Start Page
- 221
- End Page
- 226
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175615
- DOI
- 10.1149/1.3375604
- ISSN
- 1938-5862
- Abstract
- Effect of ozone concentration (200-400 g/Nm3) on atomic layer deposition of HfO2 thin films on Si wafers using tetrakis (dimethylamino)hafhium (TDMAHf) as Hf precursor was systematically studied. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses show that oxidation of the Si substrate enhances with ozone concentration which leads to an increase in interfacial layer (TL) thickness between the high-k dielectric and the substrate. The relatively thicker IL successfully suppresses additional growth of itself and Si out-diffusion into the dielectric during post deposition annealing (PDA). Corresponding electrical characteristics such as capacitance-voltage, leakage current density and time zero dielectric breakdown display significant improvement for HfO2 film prepared using higher ozone concentration after PDA.
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