Analysis of Layers and Interfaces in a Multi-Layer System and Schematic Simulation Using Angle-Resolved X-ray Photoelectron Spectroscopy
- Authors
- Choi, Sun Gyu; Park, Hyung-Ho; Jeon, Hyeongtag; Chang, Ho Jung
- Issue Date
- Nov-2009
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ARXPS; High-k; Thin Film; Multilayer; Thickness; Simulation
- Citation
- JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, v.6, no.11, pp.2398 - 2401
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
- Volume
- 6
- Number
- 11
- Start Page
- 2398
- End Page
- 2401
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175930
- DOI
- 10.1166/jctn.2009.1295
- ISSN
- 1546-1955
- Abstract
- Standardization of an analytical procedure for bonding structure and thickness simulation of nanoscaled ultra thin films was established using the theoretical background of angle-resolved X-ray photoelectron spectroscopy (ARXPS). A structure simulation using ARXPS was designed and a software program with java language was provided for application to a high-k dielectric multilayer system. A thickness simulation was applied to a high-k dielectric layer on semiconductor system of about 2-3 nm Gd2O3/GaAs and compared to experimental results. Multilayer structure of high-k binary oxide system (HfO2 and Al2O3) was simulated by photoelectron flux ratio change and their multilayer stacking structures were analyzed with different each layer thickness.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175930)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.