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Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing
- Issue Date
- Nov-2009
- Publisher
- American Institute of Physics
- Keywords
- diffusion; high-temperature effects; impurity scattering; magnesium compounds; magnetic impurities; magnetic tunnelling; ruthenium; tunnelling magnetoresistance
- Citation
- Applied Physics Letters, v.95, no.22, pp 1 - 3
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 95
- Number
- 22
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- We study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 degrees C, circumventing Mn diffusion conventionally caused by postannealing process. The high temperature in situ annealing leads to Ru diffusion at the CoFeB/Ru interfaces, and thereby results in a reduction in tunnel magnetoresistance (TMR). The minimization of Ru diffusion during the in situ annealing provides a large TMR of 294% at room temperature with an exchange-bias field of 280 Oe. In addition, the temperature and voltage dependence of TMR reveals that there is neither significant spin-exchange scattering nor severe impurity-assisted scattering in the MgO barrier.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)