Nonvolatile Unipolar and Bipolar Resistive Switching Characteristics in Co-doped TiO2 Thin Films with Different Compliance Currents
- Authors
- Do, Young Ho; Kwak, June Sik; Hong, Jin Pyo; Im, Hyunsik; Park, Bae Ho
- Issue Date
- Sep-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ReRAM; Nonvolatile memory; Bipolar switching; Co-doped TiO2
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1009 - 1012
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 3
- Start Page
- 1009
- End Page
- 1012
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176274
- DOI
- 10.3938/jkps.55.1009
- ISSN
- 0374-4884
- Abstract
- The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventional rf magnetron sputtering system was investigated by using structural and electrical measurements The Co-doped TiO2 thin films dispaly a rutile phase and a column-like structure. An unusual result, a switching transition from a unipolar to a bipolar behavior, was clearly observed at a high compliance current. The experimental results suggest that the switching transition is related to the formation of trap sites (CoOx, TiO2-x, and Co-x-Ti1-xO2) under large electrical stress conditions. The improved reproducible switching properties of our Co-doped TiO2 materials under forward and reverse bias stresses demonstrate the possibility of future non-volatile memory elements.
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