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Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
- Authors
- Lee, Jong Hyun; Lee, Jun Seok; Cha, Seung Nam; Kim, Jong Min; Seo, Do Seok; Bin Im, Won; Hong, Jin Pyo
- Issue Date
- May-2009
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- ZnO; Aluminium-nitride codoped; p-type; Homojunction
- Citation
- THIN SOLID FILMS, v.517, no.14, pp.3950 - 3953
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 517
- Number
- 14
- Start Page
- 3950
- End Page
- 3953
- ISSN
- 0040-6090
- Abstract
- High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)