Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates
- Authors
- Gong, Su Cheol; Yoo, Byung Chul; Shin, Ik Sub; Jeon, Hyeongtag; Park, Hyung-Ho; Chang, Ho Jung
- Issue Date
- Jan-2009
- Publisher
- SPIE
- Keywords
- Atomic layer deposition (ALD); Filed effect mobility; Flexible polyether sulfone (PES); Organic-Inorganic Thin Film Transistor (OITFT); PVP; ZnO
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.7217, pp.1 - 6
- Indexed
- SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 7217
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177362
- DOI
- 10.1117/12.808357
- ISSN
- 0277-786X
- Abstract
- The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.
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