Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal-insulator-semiconductor structure

Abstract

Charge trapping properties of electrons and holes in ALL nanoparticles embedded in metal-insulator-semiconductor (MIS) on p-type Si (10 0) substrates were investigated by electrostatic force microscopy (EFM). The ALL nanoparticles were prepared with a unique laser irradiation method and charged by applying a bias voltage between EFM tip and sample. The EFM system was used to image charged areas and to determine quantitatively the amount of stored charge in the ALI nanoparticle-inserted MIS structure. In addition, charge trapping characteristics of the samples were carried out with electrical measurements, such as capacitance-voltage and current-voltage measurement for memory characteristics. Finally, the comparison of EFM results with the electrically measured data was done to determine the amount of stored charge in the ALI nanoparticle-inserted MIS struCtUre, confirming the usefulness of EFM system for the characterization of nanoparticle-based non-volatile devices.