Growth of nitrogen doped ZnO films through a nitrogen diffusion process from WN films formed by a cosputtering technique
- Authors
- Lee, Jonghyun; Ha, Jaehwan; Hong, Jinpyo; Cha, Seungnam; Paik, Ungyu
- Issue Date
- Sep-2008
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.5, pp.1696 - 1699
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 26
- Number
- 5
- Start Page
- 1696
- End Page
- 1699
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177973
- DOI
- 10.1116/1.2968706
- ISSN
- 1071-1023
- Abstract
- High quality nitrogen doped ZnO films were fabricated on glass substrates by allowing nitrogen atoms from a pregrown tungsten nitride (WN) to be activated and diffused into a pure ZnO film during an in situ post-thermal annealing process. The N doped ZnO film exhibited reproducible electrical properties including a Hall concentration of 3.69x10(18) cm(-3), a mobility of 1.35 cm(2)/V-s , and a resistivity of 10 Omega cm at room temperature, along with corresponding structural results. Further investigation using ZnO p-n homojunctions, which displayed good I-V characteristics with a turn-on voltage of about 3 V, demonstrated that the p-type ZnO growth process can simply form p-type ZnO:N.
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